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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X UHF power transistor
Product specification File under Discrete Semiconductors, SC14 1995 Sep 22
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * High efficiency * Small size discrete power amplifier * 900 MHz and 1.9 GHz operating areas * Gold metallization ensures excellent reliability. APPLICATIONS * Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
Marking code: T5. 1
BFG10W/X
fpage
4
3
2
MBK523
Top view
Fig.1 SOT343. QUICK REFERENCE DATA RF performance at Tamb = 25 C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms f (GHz) 1.9 0.9 0.9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature up to Ts = 102 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN. MAX. 20 10 2.5 250 250 400 +150 175 V V V mA mA mW C C UNIT VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (dB) 5 10 12.5 c (%) 50 50 50
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 102 C; note 1; Ptot = 400 mW VALUE 180 UNIT K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 0.1 mA open base; IC = 5 mA open collector; IE = 0.1 mA VCE = 6 V; VBE = 0 IC = 50 mA; VCE = 5 V IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCE = 6 V; f = 1 MHz MIN. 20 10 2.5 - 25 - -
BFG10W/X
MAX. - - - 100 - 3 2 V V V
UNIT
A pF pF
103 handbook, full pagewidth Zth j-a (K/W) =1 0.75 102 0.5 0.33 0.2
MBG431
10
0.1 0.05 0.02 0.01
P
= T
tp
tp T 1 10-6 10-5 10-4 10-3 10-2 10-1
t
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
handbook, halfpage
2.0
MLC819
Cc (pF) 1.5
1.0
0.5
0 0 2 4 6 8 10 V CB (V)
Fig.3
Collector capacitance as a function of collector-base voltage.
1995 Sep 22
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Tamb = 25 C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms f (GHz) 1.9 0.9 0.9 Ruggedness in class-AB operation VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (dB)
BFG10W/X
c (%) 50; typ. 60 50 50
5; typ. 7 10 12.5
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8 and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
MLC820
MBG194
handbook, halfpage
10
Gp
(dB) 8
c
100 c (%) 80
handbook, halfpage
16
80 Gp c 60
Gp
(dB) 12
c (%)
6
Gp
60 8 40
4
40 4
20
2
20
0 0 100 200 300
0 400 500 P L (mW)
0 0.3
20 0.5 0.7 0.9 1.1 P L (mW)
Pulsed, class-AB operation. VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2. Circuit optimized for PL = 200 mW.
Pulsed, class-AB operation. VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8. Circuit optimized for PL = 600 mW.
Fig.4
Power gain and efficiency as functions of load power; typical values.
Fig.5
Power gain and efficiency as functions of load power; typical values.
1995 Sep 22
5
Philips Semiconductors
Product specification
UHF power transistor
List of components (see Fig.6) COMPONENT TR1 C1, C4, C7 C2 C3 C5 C6 C8 C9 L1 L4 L2, L3 R1 R2 R3 Notes 1. VBE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. DESCRIPTION bias transistor, BC548 or equivalent capacitor; notes 2 and 3 capacitor; note 2 capacitor; note 2 capacitor; note 2 capacitor; note 2 Philips multilayer capacitor Philips capacitor 6 turns enamelled 0.7 mm copper wire 2 turns enamelled 0.7 mm copper wire RF choke, Philips metal film resistor metal film resistor metal film resistor 275 100 10 VALUE note 1 120 pF 6.8 pF 0.5 pF 1.2 pF 1.9 pF 1 nF, 10 V 1500 F, 10 V length 3.5 mm length 3 mm DIMENSIONS
BFG10W/X
CATALOGUE No.
2222 032 14152
4312 020 36690
handbook, full pagewidth
+Vbias R1
+VCC
R2 R3 TR1 L2 L3
C9
C8 L1 C1
C4 L4 C7 DUT
C2
C3
C5
C6
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22
6
Philips Semiconductors
Product specification
UHF power transistor
List of components (see Fig.7) COMPONENT TR1 C1, C6, C7, C8 C2 C3 C4 C5 C9, C10 L1, L2 R1, R2 R3, R4 Notes 1. VBE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. DESCRIPTION bias transistor, BC548 or equivalent capacitor; notes 2 and 3 capacitor; note 2 capacitor; note 2 capacitor; note 2 capacitor; note 2 Philips capacitor RF choke, Philips metal film resistor metal film resistor 75 10 VALUE note 1 24 pF 0.4 pF 2.4 pF 0.5 pF 1.2 pF 1500 F, 10 V DIMENSIONS
BFG10W/X
CATALOGUE No.
2222 032 14152 4330 030 36301
handbook, full pagewidth
+Vbias
R1
R2
L1 L2
TR1 C9 C7 C8 C10
+VCC
C1 DUT C2 C3 C4 C5
C6
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22
7
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE
BFG10W/X
handbook, full pagewidth
0.2 M A
0.2 M B
0.4 0.2
0.1 max A
1.00 max 0.2
4
3
2.2 2.0
1.35 1.15
1
0.7 0.5
2
0.3 0.1 0.25 0.10
1.4 1.2 2.2 1.8
B
MSB374
Dimensions in mm.
Fig.8 SOT343.
1995 Sep 22
8
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG10W/X
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Sep 22
9

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